Process

Tool

Description

Electron-Beam Lithography

Vistec EBPG 5000+

100keV; up to 150 mm wafer; overlay 10nm (2σ) (with optimal markers); Feature resolution limit ~10nm, pitch resolution limit ~30nm, resolution depends strongly on resist, substrate and pattern

Raith EBPG 5200

100keV; up to 200 mm wafer; overlay 10nm (2σ) (with optimal markers); Feature resolution limit ~10nm, pitch resolution limit ~30nm, resolution depends strongly on resist, substrate and pattern

Optical Lithography

"Aligner 5"

Süss MJB4

front side alignment, MFS ≈ 1µm, overlay < 0.5µm, lamp: 350 W (Hg), max. sample size 100 mm

"Aligner 4"

Süss MA8/BA8

front and back side alignment, MFS ≈ 0.3µm, overlay 0.25µm, lamp: 1 kW (Hg), max. sample size 200 mm

Laser Writer

"DWL"

Heidelberg Instruments DWL 66+

front and back side alignment, grayscale exposure mode, laser: 375 nm, MFS > 0.6µm, overlay < 0.5µm, max. sample size 200mm

"MLA 100"

Heidelberg Instruments MLA 100

ffront side alignment, laser: 365 nm, MFS ≈ 1µm, overlay < 1µm, max. sample size 150 mm

"MLA 150-1"

Heidelberg Instruments MLA 150

front side alignment, laser: 365 nm, MFS ≈ 1µm, overlay < 1µm, max. sample size 200 mm, high aspect ratio feature

"MLA 150-2"

Heidelberg Instruments MLA 150

front and back side alignment, laser: 365 nm, MFS ≈ 0.6µm, overlay < 0.5µm, max. sample size 200 mm

"NanoFrazor"

Heidelberg Instruments NanoFrazor Explore

tip mode: [MFS > 15nm, overlay 25nm, gray scale possible]; laser mode: [MFS > 0.6µm, overlay 100 nm]; max. sample size 200 mm, max. write field 60x60µm²

3D Printer

"Nanoscribe"

Nanoscribe Photonic Professional GT2

xy-res. > 0.5µm, z-res. > 1µm, max print volume 100 mm³, max. object height 8 mm

Nano-Imprint

"NIL"

Nanonex NX 2000

thermal and UV imprint, max. 200°C and 600psi,  MFS ≈ 20 nm, max. sample size 100 mm

Dry Etching

"RIE 4-1"

Oxford Plasmalab 100

ICP 380

Up to 100mm, Si-line, load lock, cryo process,

Gas species: Ar, O₂, SF₆, CHF₃, CF₄, Cl₂

_{Wide Tempertaure Range Electorde (-150°C to +400°C)}

"RIE 4-2"

Oxford Plasmalab 100

ICP 380

Up to 200mm, Si-line, load lock, EPD-LI

Gas species: Ar, O₂, HBr, Cl₂, BCl₃, SF₆, CHF₃

"RIE 5"

Oxford Plasmalab 100

ICP 180

Up to 150 mm, III/V-line, load-lock, EPD-LI

Gas species: Ar, O₂, SF₆, CHF₃, CF₄, Cl₂, BCl_3, CH₄, H₂

"RIE 6"

Oxford Plasmalab 100

ICP 180

UUp to 100 mm, BioHybrid-line, Load lock, Bosch and cryo process for deep silicon etching

Gas species: Ar, O₂, SF₆, CHF₃, CF₄, C₄F₈

_{Wide Tempertaure Range Electorde (-150°C to +400°C)}

"RIE 7"

Oxford Plasmalab 100

ICP 180

Up to 100 mm, BioHybrid-line, load lock,

Gas species: Ar, O₂, CF₄, HBr, Cl₂, BCl₃

_{Wide Tempertaure Range Electorde (-150°C to +400°C)}

"ALE 1"

Oxford PlasmaPro 100 Cobra ICP 300

Up to 100 mm, III/V-line, load lock, cryo process; EPD-OES

Gas species: Ar,O₂, SF₆, CHF₃, CF₄, Cl₂, BCl₃, CH4, H₂, N₂O

_{Wide Tempertaure Range Electorde (-150°C to +400°C)}

"ALE 2"

Oxford PlasmaPro 100 Cobra ICP 300

Up to 100 mm, Si-line, load lock, EPD-OES

Gas species: Ar, O₂, SF₆, CHF₃, CF₄, HBr, Cl₂, BCl₃, CH4, H₂, C₄F₈

_{Wide Tempertaure Range Electorde (-150°C to +400°C)}

"Gigabatch 1"

PVA TePla Gigabatch 310M

Up to 150 mm, resist stripping, BioHybrid-line, Gas species: Ar, O₂, CF₄

"Gigabatch 2"

PVA TePla Gigabatch 310M

Up to 150 mm, resist stripping, Si-line,

Gas species: Ar, O₂, CF₄

"Gigabatch 3"

PVA TePla Gigabatch 310M

Up to 150 mm, rsist stripping,

Gas species: Ar, O₂

Deposition

"EVA"

Alliance Concept EVA451

1 x 100 mm via load lock, 1 x 150mm via main chamber; Ar-cleaning in load lock, 6 crucibles

"PLS570"

Balzer PLS 570

Up to 6 x 150 mm, load lock, Ar - Cleaning, 8 crucibles, BioHybrid-line

"Univex"

Leybold Univex 400

Up to 100 mm, Ar-Cleaning in load lock, 8 crucibles

"EVO"

Oerlikon EVO 2

Up to 200 mm, CMOS only, DC/RF-Sputtering, three sources parallel, Al, Ti, TiN, Ta, Ni, TaN, insulators

Oxford Plasmalab 100 PECVD

Up to 200 mm, load lock, Si-line, deposition of SiO₂, SiN_x at 200°C to 350°C; LF- and RF-plasma nodes

Sentech SI500D

ICP-PECVD

Up to 200 mm, load lock,BioHybrid-line, deposition of SiO₂, SiN_x at100°C to 280°C

Centrotherm LPCVD

Up to 200mm, Si-line, deposition of low stress SiN, stochiometric SiN and TEOS

FHR Sputtertool

Up to 100mm, substrate temperatur up to 800^oC, single and co-sputtering, TiN; TiAlN; Nb; Pt; Al

"ALD-Bio"

Oxford ALD

Up to 100mm, load lock, BioHybrid-line, Deposition of TaO_x, Al₂O₃, TiO₂ and TiN

"ALD-QC"

Oxford ALD

Up to 100mm, load lock, Si-line, Deposition of SiO₂ and Al₂O₃

Dicing

Disco DAD3350

Si, Ge, SiGe, up to 200 mm and thickness of 1.5 mm, no III/V-materials, 2" spindle

Disco DAD3350

Glass (ultra sonic), Al₂O₃, SiC, Si, LaAlO_3,  SrTiO₃ (w/o US), up to 200 mm and thickness of 1.5 mm, no II/V-materials, 2" spindle

OEG GmbH

Up to 100 mm, for GaAs, Si

Wet Benches

Full wet bench line for Si processing

Wet benches for Preclean, Cleaning S1/S2, RCA, Resist coating (incl. HDMS), Development, Solvents, Lift off, wet etching, up to 200 mm

Full wet bench line for III/V processing

Wet benches for Preclean, Cleaning, Resist coating (incl. HDMS), Development, Solvents, Lift off, wet etching, up to 150 mm

Full wet bench line for Biohybrids and not semiconductor materials

Wet benches for Preclean, Cleaning, Resist coating (incl. HDMS), Development, Solvents, Lift off, wet etching, up to 200 mm

Four Wet benches for solvent based processes

Four Wet benches for solvent based processes

Wet benches for Neurotec

Two wet benches for developing and etching of Neurotec samples

Süss RCD-8 + Wet bench for development

Service only

Semi-automatic spinner, up to 200 mm

CPD critical point dryer

Tousimis 931 series

up to 2,5"

Implanter

Axcelis Optima

Service only

Up to 300mm, 200ev-60Kev, B, BF₂, P, As, Si, H, H₂, only Si

Axelis 8250

Service only

Up to 150 mm, 1 KeV- 250 KeV B, BF₂, P, As, Si, H,

Eaton NV 3204

Service only

Up to 100 mm, 20-200 KeV

Thermal processing

"RTP 2"

UniTemp RTP 150

Rapid Thermal Processing, III/V-line, Gas Species: N₂, H₂, O₂, Ar, max 1000^oC, up to 150 mm

"RTP 3"

UniTemp RTP 150

Rapid Thermal Processing, BioHybrid-line, Gas Species: N₂, H₂, O₂, Ar, max 1000^oC, up to 150 mm

"RTP 4"

UniTemp RTP 150

Rapid Thermal Processing, BioHybrid-line, Gas Species: N₂, H₂, O₂, Ar, max 1200^oC, vacuum processing, up to 150 mm

"Expertech 1"

Expertech CTR-150

Up to 150 mm, wet and dry thermal oxidation of Si, 800°C-1050^oC

"Expertech 2"

Expertech CTR-150

Up to 150 mm, dry thermal oxidation of Si, 600°C -1050^oC

"Expertech 3"

Expertech CTR-150

Up to 150 mm, dry thermal oxidation of Si, 600°C -1050^oC

"CLV-1"

Centrotherm CLV-100

Up to 200mm, Dry and wet oxidation at 800°C – 1050°C

"CLV-2"

Centrotherm CLV-100

Up to 200mm, Dry and wet oxidation at 800°C – 1050°C

Analytic

"Magellan"

FEI TFS Magellan 400

High resoluition SEM,Oxford Instruments X-Max 80 mm² EDX detector, AZtec 5.0

"FIB"

FEI TFS Helios 600i (G3)

Focused Ion Beam, Pt-GIS,  Easylift, Leica VCT 100 Cryo-Transfer System, AutoTEM 4, AutoScript

"LEO"

Zeiss 1550 Scanning Electron Microscope

General purpose SEM

"VP"

Zeiss 1550 VP Scanning Electron Microscope

General purpose SEM

"300"

Zeiss Sigma 300

General purpose SEM, 4 x Kleindiek MM3A-EM Micromanipulators

SenTech SE800 spectroscopic ellipsometer

Up to 300mm, mapping; Spectral range from 300nm to 850nm;

Accurion nanofilm RSE, fast spectroscopic ellipsometer

Up to 100 mm, mapping

Accurion nanofilm EP4, imaging ellipsometer

Up to 100 mm, mapping, 3D imaging

Bruker Dektak 150, Surface profiler

2 nm vertical resolution

Bruker Dektak XT, mapping profiler

2 nm vertical resolution

"AFM"

Bruker Dimension Edge

Nanoscale surface topography; Nanoscale Height & Roughness; Programmable for multi-site measurements;

X-Y Scan Range: 100µm x 100µm, Vertical Range: 10µm; 150mm x 150mm inspectable area

Leica INM 100 Microscope

optical microscope

Confovis Confocal Mikroscope L200

3D-Scans/surface topography; Height & Roughness; Overlay; Magnification: up tp 100x; up to 8 inch Wafer

"Blue"

Nikon L200N optical microscope

Episcopic/diascopic; brightfield/darkfield; polarisingfilter + DIC; div. magnfications up to x150x; up to 200mm

"Red"

Nikon L200N optical microscope

Episcopic/diascopic; brightfield/darkfield; polarisingfilter + DIC; div. magnfications up to x150x; up to 200mm

Keithley 4200 with probstation MPI-TS200

electrical parameter analyser, DC-IV range 0.2µV to 20V, DC current 100fA to 100mA; CV: 1kHz-10MHz 1V AC drive; 1aF, 1nS,0.001degree