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2013

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Layer-by-layer shuttered molecular-beam epitaxial growth of superconducting Sr1–xLaxCuO2 thin films
Journal of applied physics 113(5), 053911 () [10.1063/1.4790150] Allianz-OA  Download fulltext Files  Download fulltextFulltext by OpenAccess repository BibTeX | EndNote: XML, Text | RIS

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Effect of film thickness and biaxial strain on the curie temperature of EuO
Applied physics letters 102(6), 062404 - () [10.1063/1.4789972] Allianz-OA  Download fulltext Files  Download fulltextFulltext by OpenAccess repository BibTeX | EndNote: XML, Text | RIS

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Effective attenuation length for lanthanum lutetium oxide between 7 and 13 keV
Applied physics letters 102(3), 031607 () [10.1063/1.4789524] Allianz-OA  Download fulltext Files  Download fulltextFulltext by OpenAccess repository BibTeX | EndNote: XML, Text | RIS

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Photoemission spectroscopy study of the lanthanum lutetium oxide∕silicon interface
The journal of chemical physics 138(15), 154709 () [10.1063/1.4801324] OpenAccess  Download fulltext Files  Download fulltextFulltext by OpenAccess repository BibTeX | EndNote: XML, Text | RIS

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Reduction of silicon dioxide interfacial layer to 4.6 A EOT by Al remote scavenging in high K/metal gate stacks on Si
Microelectronic engineering 109, 109 - 112 () [10.1016/j.mee.2013.03.066]  Download fulltext Files BibTeX | EndNote: XML, Text | RIS

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Relaxor ferro- and paraelectricity in anisotropically strained SrTiO3 films
Journal of applied physics 113(16), 164103 - () [10.1063/1.4802676] OpenAccess  Download fulltext Files  Download fulltextFulltext by OpenAccess repository BibTeX | EndNote: XML, Text | RIS

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Advanced high-k gate dielectric amorphous LaGdO3 gated metal-oxide-semiconductor devices with sub-nanometer equivalent oxide thickness
Applied physics letters 102(19), 192904 - () [10.1063/1.4805037] OpenAccess  Download fulltext Files  Download fulltextFulltext by OpenAccess repository BibTeX | EndNote: XML, Text | RIS

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Study of dopant activation in biaxially compressively strained SiGe layers using excimer laser annealing
Journal of applied physics 113(20), 204902 () [10.1063/1.4807001] OpenAccess  Download fulltext Files  Download fulltextFulltext by OpenAccess repository BibTeX | EndNote: XML, Text | RIS

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Millisecond flash lamp annealing for LaLuO3 and LaScO3 high-k dielectrics
Microelectronic engineering 109, 381 - 384 () [10.1016/j.mee.2013.04.021]  Download fulltext Files BibTeX | EndNote: XML, Text | RIS

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LaAlO3 stoichiometry is key to electron liquid formation at LaAlO3/SrTiO3 interfaces
Nature Communications 4, 9 () [10.1038/ncomms3351] OpenAccess  Download fulltext Files  Download fulltextFulltext by OpenAccess repository BibTeX | EndNote: XML, Text | RIS

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Enhancement-Mode LaLuO3–AlGaN/GaN Metal–Insulator–Semiconductor High-Electron-Mobility Transistors Using Fluorine Plasma Ion Implantation
Japanese journal of applied physics 52, 08JN02 - () [10.7567/JJAP.52.08JN02]  Download fulltext Files BibTeX | EndNote: XML, Text | RIS

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Fabrication and Characterization of Enhancement-Mode High-kappa LaLuO3-AlGaN/GaN MIS-HEMTs
IEEE transactions on electron devices 60(10), 3040 - 3046 () [10.1109/TED.2013.2277559]  Download fulltext Files BibTeX | EndNote: XML, Text | RIS

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Inducing exchange bias in La_{0.67}Sr_{0.33}MnO_{3−δ}/SrTiO_{3} thin films by strain and oxygen deficiency
Physical review / B 88(14), 144427 () [10.1103/PhysRevB.88.144427] OpenAccess  Download fulltext Files  Download fulltextFulltext by OpenAccess repository BibTeX | EndNote: XML, Text | RIS

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Epitaxial growth of europium monoxide on diamond
Applied physics letters 103(22), 222402 - () [10.1063/1.4833550] OpenAccess  Download fulltext Files  Download fulltextFulltext by OpenAccess repository BibTeX | EndNote: XML, Text | RIS

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Strain States in YSZ / RE2O3 (RE = Er, Y) Multilayers as a Function of Layer Thickness and Their Effect on Interface Conductivity and Diffusion
MRS online proceedings library 1542, mrss13-1542-g08-02 () [10.1557/opl.2013.577] BibTeX | EndNote: XML, Text | RIS

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Development of redox glasses and subsequent processing by means of pulsed laser deposition for realizing silicon-based thin-film sensors.
Electrochimica acta 113, 762 - 767 () [10.1016/j.electacta.2013.08.092]  Download fulltext Files BibTeX | EndNote: XML, Text | RIS


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