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2011

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Atomic layer deposition of HfO2 and Al2O3 layers on 300 mm Si wafers for gate stack technology
Journal of vacuum science & technology / B 29, 01A301 () [10.1116/1.3521374] BibTeX | EndNote: XML, Text | RIS

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Rare-earth oxide/TiN gate stacks on high mobility strained silicon on insulator for fully depleted metal-oxide-semiconductor field-effect transistors
Journal of vacuum science & technology / B 29, 01A903 () [10.1116/1.3533760] BibTeX | EndNote: XML, Text | RIS

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CV measurements on LaLuO3 stack metal-oxide-semiconductor capacitor using a new three-pulse technique
Journal of vacuum science & technology / B 29, 01AB03 () [10.1116/1.3533267] BibTeX | EndNote: XML, Text | RIS

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Integration of LaLuO3 (k 30) as High-k Dielectric on Strained and Unstrained SOI MOSFETs with Replacement Gate Process
IEEE Electron Device Letters 32, 15 - 17 () [10.1109/LED.2010.2089423] BibTeX | EndNote: XML, Text | RIS

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An Efficient SQUID NDE Defect Detection Approach by Using an Adaptive Finite-Element Modeling
Journal of superconductivity and novel magnetism 24, () [10.1007/s10948-010-0860-3] BibTeX | EndNote: XML, Text | RIS

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High quality TbMnO3 films deposited on YAlO3
Journal of alloys and compounds 509, 5061 - 5063 () [10.1016/j.jallcom.2011.03.015] BibTeX | EndNote: XML, Text | RIS

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Rare-Earth Scandate/TiN Gate Stacks in SOI MOSFETs Fabricated with a Full Replacement Gate Process
IEEE Transactions on Electron Devices 58, 617 - 622 () [10.1109/TED.2010.2096509] BibTeX | EndNote: XML, Text | RIS

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Influence of the substrate temperature on the Curie temperature and charge carrier density of epitaxial Gd-doped EuO films
Applied physics letters 98, 102110 () [10.1063/1.3563708] Allianz-OA  Download fulltext Files  Download fulltextFulltext by OpenAccess repository BibTeX | EndNote: XML, Text | RIS

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Electrical and structural properties of ternary rare-earth oxides on Si and higher mobility substrates and their integration as high-k gate dielectrics in MOSFET devices
ECS transactions 35, 461 - 479 () BibTeX | EndNote: XML, Text | RIS

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Investigation of Electron and Hole Charge Trapping in LaLuO3 Stack MOS Capacitor Using the Three-Pulse CV Technique
ECS transactions 35, 531 - 543 () BibTeX | EndNote: XML, Text | RIS

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LaScO3 as higher-k dielectric for p-MOSFETs
Microelectronic engineering 88, 1323 - 1325 () [10.1016/j.mee.2011.03.048] BibTeX | EndNote: XML, Text | RIS

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Study of interfaces and band offsets in TiN/amorphous LaLu=3 gate stacks
Microelectronic engineering 88, 1495 - 1498 () [10.1016/j.mee.2011.03.051] BibTeX | EndNote: XML, Text | RIS

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Millisecond flash-lamp annealing of LaLuO3
Microelectronic engineering 88, 1346 - 1348 () [10.1016/j.mee.2011.03.126] BibTeX | EndNote: XML, Text | RIS

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Electrical properties of high-k LaLuO3 gate oxide for SOI MOSFETs
Advanced materials research 276, 87 - 93 () [10.4028/www.scientific.net/AMR.276.87] BibTeX | EndNote: XML, Text | RIS

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Analytical Model for the Extraction of Flaw-Induced Current Interactions for SQUID NDE
IEEE transactions on applied superconductivity 21, 3442 - 3446 () [10.1109/TASC.2011.2119373] BibTeX | EndNote: XML, Text | RIS

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Nanoscale photoelectron ionisation detector based of lanthanum hexaboride
Physica status solidi / A 208, 1241 - 1245 () [10.1002/pssa.201000966] BibTeX | EndNote: XML, Text | RIS

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High mobility strained Si(0.5)Ge(0.5)/SSOI short channel field effect transistors with TiN/GdScO(3) gate stack
Microelectronic engineering 88, 2955 - 2958 () [10.1016/j.mee.2011.04.030] BibTeX | EndNote: XML, Text | RIS

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Characterization of high- LaLuO3 thin film grown on AlGaN/GaN heterostructure by molecular beam deposition
Applied physics letters 99, 182103 () [10.1063/1.3657521] Allianz-OA  Download fulltext Files  Download fulltextFulltext by OpenAccess repository BibTeX | EndNote: XML, Text | RIS

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Mapping and statistics of ferroelectric domain boundary angles and types
Applied physics letters 99, 162902 () [10.1063/1.3643155] Allianz-OA  Download fulltext Files  Download fulltextFulltext by OpenAccess repository BibTeX | EndNote: XML, Text | RIS

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Structural and Electrical Properties of Lanthanum Gadolinium Oxide: Ceramic and Thin Films for High-k Application
Integrated ferroelectrics 125, 44 - 52 () [10.1080/10584587.2011.574039] BibTeX | EndNote: XML, Text | RIS

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Fabrication and electrical characterization of high-k LaGdO3 thin films and field effect transistors
ECS transactions 35, 297 - 304 () BibTeX | EndNote: XML, Text | RIS


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