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2013

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Epitaxial Growth of Ge1-xSnx by REduced Pressure CVD Using SnC14 and Ge2H6
ECS transactions 50(9), 885-893 () [10.1149/05009.0885ecst]  Download fulltext Files BibTeX | EndNote: XML, Text | RIS

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Photoemission spectroscopy study of the lanthanum lutetium oxide∕silicon interface
The journal of chemical physics 138(15), 154709 () [10.1063/1.4801324] OpenAccess  Download fulltext Files  Download fulltextFulltext by OpenAccess repository BibTeX | EndNote: XML, Text | RIS

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Reduction of silicon dioxide interfacial layer to 4.6 A EOT by Al remote scavenging in high K/metal gate stacks on Si
Microelectronic engineering 109, 109 - 112 () [10.1016/j.mee.2013.03.066]  Download fulltext Files BibTeX | EndNote: XML, Text | RIS

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Low temperature RPCVD epitaxial growth of Si1−xGex using Si2H6 and Ge2H6
Solid state electronics 83, 2 - 9 () [10.1016/j.sse.2013.01.032]  Download fulltext Files BibTeX | EndNote: XML, Text | RIS

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Band engineering and growth of tensile strained Ge/(Si)GeSn heterostructures for tunnel field effect transistors
Applied physics letters 102(19), 192103 - () [10.1063/1.4805034] OpenAccess  Download fulltext Files  Download fulltextFulltext by OpenAccess repository BibTeX | EndNote: XML, Text | RIS

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Study of dopant activation in biaxially compressively strained SiGe layers using excimer laser annealing
Journal of applied physics 113(20), 204902 () [10.1063/1.4807001] OpenAccess  Download fulltext Files  Download fulltextFulltext by OpenAccess repository BibTeX | EndNote: XML, Text | RIS

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Reduced Pressure CVD Growth of Ge and Ge1-xSnx Alloys
ECS journal of solid state science and technology 2(5), N99 - N102 () [10.1149/2.006305jss]  Download fulltext Files BibTeX | EndNote: XML, Text | RIS

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Tensely strained GeSn alloys as optical gain media
Applied physics letters 103(19), 192110 - () [10.1063/1.4829360] OpenAccess  Download fulltext Files  Download fulltextFulltext by OpenAccess repository BibTeX | EndNote: XML, Text | RIS

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Effects of C+ ion implantation on electrical properties of NiSiGe/SiGe contacts
Nuclear instruments & methods in physics research / B 307, 408 - 411 () [10.1016/j.nimb.2012.11.088]  Download fulltext Files BibTeX | EndNote: XML, Text | RIS

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Epitaxial growth of highly compressively strained GeSn alloys up to 12.5% Sn
Journal of crystal growth 384, 71 - 76 () [10.1016/j.jcrysgro.2013.09.018]  Download fulltext Files  Download fulltextFulltext BibTeX | EndNote: XML, Text | RIS

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Dense Ge nanocrystal layers embedded in oxide obtained by controlling the diffusion–crystallization process
Journal of nanoparticle research 15(10), 1981 () [10.1007/s11051-013-1981-y]  Download fulltext Files BibTeX | EndNote: XML, Text | RIS

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Ultrathin highly uniform Ni(Al) germanosilicide layer with modulated B8 type Ni5(SiGe)3 phase formed on strained Si1−xGex layers
Applied physics letters 103(23), 231909 - () [10.1063/1.4838695] OpenAccess  Download fulltext Files  Download fulltextFulltext by OpenAccess repository BibTeX | EndNote: XML, Text | RIS

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Strain and composition effects on Raman vibrational modes of silicon-germanium-tin ternary alloys
Applied physics letters 103(26), 263103 () [10.1063/1.4855436] OpenAccess  Download fulltext Files  Download fulltextFulltext Download fulltextFulltext by OpenAccess repository BibTeX | EndNote: XML, Text | RIS


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