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2011

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High mobility compressive strained Si0.5Ge0.5 quantum well p-MOSFETs with higher-k/metal-gate
Solid state electronics 62(1), 185 - 188 () [10.1016/j.sse.2011.03.002] BibTeX | EndNote: XML, Text | RIS

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Improved NiSi0.8Ge0.2/Si0.8Ge0.2 Contacs by C+ Pre-Implantation
Electrochemical and solid-state letters 14, H261-H263 () [10.1149/1.3578387] BibTeX | EndNote: XML, Text | RIS

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Epitaxial growth of Ni(Al)Si0.7Ge0.3 on Si0.7Ge0.3/Si(100) by Al interlayer mediated epitaxy
Applied physics letters 98, 252101 () [10.1063/1.3601464] Allianz-OA  Download fulltext Files  Download fulltextFulltext by OpenAccess repository BibTeX | EndNote: XML, Text | RIS

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High mobility strained Si(0.5)Ge(0.5)/SSOI short channel field effect transistors with TiN/GdScO(3) gate stack
Microelectronic engineering 88, 2955 - 2958 () [10.1016/j.mee.2011.04.030] BibTeX | EndNote: XML, Text | RIS


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