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2010

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Formation of steep, low Schottky-barrier contacts by dopant segregation during nickel silicidation
Journal of applied physics 107, 044510-6 () [10.1063/1.3284089] OpenAccess  Download fulltext Files  Download fulltextFulltext by OpenAccess repository BibTeX | EndNote: XML, Text | RIS

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Self-Organized Si-Nanotransistors
Japanese journal of applied physics 49, 04DJ02 () [10.1143/JJAP.49.04DJ02] BibTeX | EndNote: XML, Text | RIS

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Wet Chemical Etching of Si, Si1-xGex, and Ge in HF:H2O2:CH3COOH
Journal of the Electrochemical Society 157, H643 - H646 () [10.1149/1.3382944] BibTeX | EndNote: XML, Text | RIS

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Strain tensors in layer systems by precision ion channeling measurements
Journal of applied physics 107, 124906 () [10.1063/1.3415530] OpenAccess  Download fulltext Files  Download fulltextFulltext by OpenAccess repository BibTeX | EndNote: XML, Text | RIS

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Elastic strain and dopant activation in ion implanted strained Si nanowires
Journal of applied physics 108, 124908 () [10.1063/1.3520665] OpenAccess  Download fulltext Files  Download fulltextFulltext by OpenAccess repository BibTeX | EndNote: XML, Text | RIS


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