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Peter Grünberg Institute
Semiconductor Nanoelectronics (PGI-9)

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Research Topic

Semiconductor nanowires can be formed directly by using the so-called bottom-up approach. In contrast to the usual top-down method where optical or electron beam lithography is employed, this approach has the potential to simply the fabrication of low-dimensional semiconductor nanostructures enormously.

Among the nanostructures fabricated by the bottom-up approach semiconductor nanowires are particular interesting, since the one-dimensional channel can not only be used as a building block for future nanotransistor but also as a versatile basis for various quantum device structures. 

InAs nanowires scanning electron micrographInAs nanowire with four gate fingers

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