Selected Publications
Dr. Hilde Hardtdegen
Journal Article
Efficient heat dissipation in AlGaN/GaN heterostructure grown on silver substrate
Applied materials today 7, 134 - 137 (2017) [10.1016/j.apmt.2017.02.008]
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Journal Article
A model structure for interfacial phase change memories: Epitaxial trigonal Ge$_{1}$Sb$_{2}$Te$_{4}$
Journal of alloys and compounds 679, 285-292 (2016) [10.1016/j.jallcom.2016.04.013]
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Journal Article
Direct electro-optical pumping for hybrid CdSe nanocrystal/III-nitride based nano-light-emitting diodes
Applied physics letters 108(6), 061107 - (2016) [10.1063/1.4941923]
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Journal Article
Modern chemical synthesis methods towards low-dimensional phase change structures in the Ge–Sb–Te material system
Progress in crystal growth and characterization of materials 61(2-4), 27 - 45 (2015) [10.1016/j.pcrysgrow.2015.10.001]
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Journal Article
Nano-LED array fabrication suitable for future single photon lithography
Nanotechnology 26(18), 185302 (2015) [10.1088/0957-4484/26/18/185302]
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1992-2013
Selected Publications
F. Haas, K. Sladek, A. Winden, M. von der Ahe, T. E. Weirich, T. Rieger, H. Lüth, D. Grützmacher, Th. Schäpers, and H Hardtdegen, Nanoimprint and selective-area MOVPE for growth of GaAs/InAs core/shell nanowires, Nanotechnology Volume 24, Issue 8, 1 March 2013, Article number 085603.
https://dx.doi.org/10.1088/0957-4484/24/8/085603
N. Thillosen, K. Sebald, H. Hardtdegen, R. Meijers, R. Calarco, S. Montanari, N. Kaluza, J. Gutowski, and H. Lüth, The state of strain in single GaN nanocolumns as derived from micro-photoluminescence measurements, Nano Lett. 6, 704 (2006).
https://dx.doi.org/10.1021/nl052456q
Th. Schäpers, V. A. Guzenko, M. G. Pala, U. Zülicke, M. Governale, J. Knobbe, and H. Hardtdegen, Suppression of weak antilocalization in Gax In1-x AsInP narrow quantum wires, Physical Review B - Condensed Matter and Materials PhysicsVolume 74, Issue 8, 2006, Article number 081301.
https://dx.doi.org/10.1021/nl052456q
H. Hardtdegen, M. Pristvsek, H. Menhal, J.-T. Zettler, W. Richter, D. Schmitz, In situ characterization of GaAs growth in nitrogen atmosphere during MOVPE: A comparison to hydrogen atmosphere , J. Cryst. Growth, 195, 211 (1998).
https://doi.org/10.1016/S0022-0248(98)00705-2
H. Hardtdegen, M. Hollfelder, R. Meyer, R. Carius, H. Münder, S. Frohnhoff, D. Szynka, H. Lüth, MOVPE growth of GaAs using a N2 carrier, J. Cryst. Growth 1992, 124, 420.
