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CRC/TRR 404 – Active 3D https://cfaed.tu-dresden.de/trr-home

"Effect of Transistor Transfer Characteristics on the Programming Process in 1T1R Configuration" X. Liu, C. Bengel, F. Cüppers, O. Solfronk, B. Zhang, S. Hoffmann-Eifert, S. Menzel, R. Waser and S. Wiefels, IEEE Transactions on Electron Devices, 2024 DOI: 10.1109/TED.2024.3370536

"Correlation between Electronic Structure, Microstructure, and Switching Mode in Valence Change Mechanism Al2O3/TiOx ‐Based Memristive Devices" S. Aussen, F. Cüppers, C. Funck, J. Jo, S. Werner, C. Pratsch, S. Menzel, R. Dittmann, R. Dunin-Borkowski, R. Waser, S. Hoffmann-Eifert, Advanced Ellectronic Materials, 2023 https://doi.org/10.1002/aelm.202300520

"A Physical Description of the Variability in Single-ReRAM Devices and Hardware-Based Neuronal Networks" C. Funck, S. Wiefels, C. Bengel, K. Schnieders, S. Hoffmann-Eifert, R. Dittmann, S. Menzel, Advanced Intelligent Systems 2023 https://doi.org/10.1002/aisy.202300129

"The MoS 2 -Graphene-Sapphire Heterostructure: Influence of Substrate Properties on the MoS 2 Band Structure" H. Wördenweber, A. Grundmann, Z. Wang, S. Hoffmann-Eifert, H. Kalisch, A. Vescan, M. Heuken, R. Waser, S. Karthäuser, The journal of physical chemistry 2023 https://doi.org/10.1021/acs.jpcc.3c02503

"Atomically resolved electronic properties in single layer graphene on α-Al2O3 (0001) by chemical vapor deposition" H. Wördenweber, S. Karthäuser, A. Grundmann, Z. Wang, S. Aussen, H. Kalisch, A. Vescan, M. Heuken, R. Waser, S. Hoffmann-Eifert, Scientific reports 2022 https://doi.org/10.1038/s41598-022-22889-4

"Effect of electron conduction on the read noise characteristics in ReRAM devices" K. Schnieders, C. Funck, F. Cüppers, S. Aussen, T. Kempen, A. Sarantopoulos, R. Dittmann, S. Menzel, V. Rana, S. Hoffmann-Eifert, S. Wiefels, APL materials 2022 https://doi.org/10.1063/5.0109787

"Strategies to Control the Relaxation Kinetics of Ag‐Based Diffusive Memristors and Implications for Device Operation" S. A. Chekol, S. Menzel, R. Waser, S. Hoffmann-Eifert, Advanced electronic materials 2022 https://doi.org/10.1002/aelm.202200549

"Intrinsic RESET Speed Limit of Valence Change Memories" M. Witzleben, S. Wiefels, A. Kindsmüller, P. Stasner, F. Berg, F. Cüppers, S. Hoffmann-Eifert, S. Menzel, R. Waser, U. Böttger, ACS applied electronic materials 2021 https://doi.org/10.1021/acsaelm.1c00981

"Effect of the Threshold Kinetics on the Filament Relaxation Behavior of Ag‐Based Diffusive Memristors", S. A. Chekol, S. Menzel, R. Ahmad, R. Waser, S. Hoffmann-Eifert Advanced functional materials 2022 https://doi.org/10.1002/adfm.202111242

"Utilizing the Switching Stochasticity of HfO2/TiOx-Based ReRAM Devices and the Concept of Multiple Device Synapses for the Classification of Overlapping and Noisy Patterns" C. Bengel, F. Cüppers, M. Payvand, R. Dittmann, R. Waser, S. Hoffmann-Eifert, S. Menzel Frontiers in neuroscience 2021 https://doi.org/10.3389/fnins.2021.661856

"The importance of singly charged oxygen vacancies for electrical conduction in monoclinic HfO2" M. P. Mueller, F. Gunkel, S. Hoffmann-Eifert, R. A. De Souza, Journal of applied physicsv 2021 https://doi.org/10.1063/5.0036024

"Variability-Aware Modeling of Filamentary Oxide-Based Bipolar Resistive Switching Cells Using SPICE Level Compact Models" C. Bengel, A. Siemon, F. Cuppers, S. Hoffmann-Eifert, A. Hardtdegen, M. von Witzleben, L. Hellmich, R. Waser, S. Menzel, IEEE transactions on circuits and systems 2020 https://doi.org/10.1109/TCSI.2020.3018502

"Evolution of short-range order in chemically and physically grown thin film bilayer structures for electronic applications" A.-C. Dippel, O. Gutowski, L. Klemeyer, U. Boettger, F. Berg, T. Schneller, A. Hardtdegen, S. Aussen, S. Hoffmann-Eifert, M. Zimmermann, Nanoscale 2020 https://doi.org/10.1039/D0NR01847C

"Cation diffusion in polycrystalline thin films of monoclinic HfO 2 deposited by atomic layer deposition" M. P. Mueller, K. Pingen, A. Hardtdegen, S. Aussen, A. Kindsmueller. S. Hoffmann-Eifert, R.A. De Souza, APL materials 2020 https://doi.org/10.1063/5.0013965

"Exploiting the switching dynamics of HfO2/TiOx-based ReRAM devices for reliable analogue memristive behaviour" F. Cüppers, S. Menzel, Bengel, A. Hardtdegen, M. von Witzleben, U. Böttger, R. Waser, S. Hoffmann-Eifert, APL materials 2019 https://doi.org/10.1063/1.5108654