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Advertising division: PGI-9 - Semiconductor Nanoelectronics
Reference number: 2020D-022

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Downscaling of silicon CMOS by Moore’s law reaches the limit. New device architectures and novel materials with high carrier mobility are required. SiGeSn semiconductor alloys offer higher mobilities for both electrons and holes. The tunable bandgap from indirect to direct makes SiGeSn alloys interesting for tunneling devices and for optical applications. Moreover, these materials are Si technology compatible thus provide easy ways to integrate both electronic and photonic devices on the present Si platform. We have developed advanced processing for such materials and successfully fabricated the first vertical GeSn/Ge heterostructure nanowire gate all around (GAA) field effect transistor. The results were reported in IEDM 2019, the most important and flagship international electronic device conference. Further device optimization, elaborated GeSn/SiGeSn heterostructures and new designs are targeted to improve the Nanowire FET device performance. The activity is supported by BMBF and DFG projects extending until 2024.

We are offering a

PhD position - Group IV-based Si-Ge-Sn nanoelectronic devices

Your Job:

  • Fabrication of nanometer FETs with small nanowires using clean room processing in the Helmholtz Nano Facility (HNF)
  • Electrical characterization of fabricated devices using a variety of methods like I-V, C-V and low temperature measurements
  • Interaction with other group members, working on fabrication process and electronic characterization for continuous process and device optimizations
  • Collaboration with international partners regarding device simulations and specific advance characterizations


Your Profile:

  • Master degree in physics or electrical engineering, ideally with a background in the field of semiconductor physics
  • Knowledge of electronic devices is beneficial
  • Preliminary experience in clean room processing is helpful
  • Very good skills in spoken and written English


Our Offer:

  • An interdisciplinary and international work environment at the well-recognized Peter-Grünberg-Institute - Semiconductor Nanoelectronics at the Forschungszentrum Jülich
  • An outstanding scientific infrastructure including state-of-the-art laboratories and clean room facilities
  • Continuous scientific mentoring by your scientific advisor
  • Possibility to pursue the doctoral degree at the RWTH Aachen
  • A time limited contract with the duration of three years
  • Participation in overarching seminars including certificate
  • Further development of your personal strengths, e.g. via a comprehensive further training programme
  • Pay in line with 65 % of pay group 13 of the Collective Agreement for the Public Service (TVöD)
  • Information on employment as a PhD student at Forschungszentrum Jülich can be found here http://www.fz-juelich.de/gp/Careers_Docs


Forschungszentrum Jülich promotes equal opportunities and diversity in its employment relations.

We also welcome applications from disabled persons.

Additional Information

The job will be advertised until the position has been successfully filled. You should therefore submit your application as soon as possible. We look forward to receiving your application via our
Online-Recruitment-System!

Questions about the vacancy?
Contact us by mentioning the reference number 2020D-022: career@fz-juelich.de
Please note that for technical reasons we cannot accept applications via email.