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Advertising division: PGI-9 - Semiconductor Nanoelectronics
Reference number: 2019D-138


The institute investigates fundamental problems in semiconductor physics and in semiconductor materials. In the device development alternative concepts and property limits are explored, e. g. the maximum transistor frequency and the minimum transistor cross section. The epitaxy of SiGe, classical III/V compounds and of GaN is a broad activity.

Electronic and optical properties of the grown layers are measured. Nanowire structures are investigated to study the quantum mechanical limit in the nanoelectronic devices. Si/SiGe nanostructures are examined to find promissing pathways to drive current CMOS technology to its limits.Templated selfassembly of semiconductor nanostructures in 2- and 3-dimensional arrays and quantum dot crystals is investigated to explore the feasibility of this new materials for future information technology.

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PhD position in the field of "Group IV-based Si-Ge-Sn light emitters"

Your Job:

The combination of optical components with electronics on the same microchip can potentially solve the bandwidth bottleneck in modern computers and allow devices with decreased power consumption. Sadly, silicon (Si) and germanium (Ge), the materials underpinning the whole digital world, lack the capability to efficiently emit light. A few years ago, alloying Ge with another group IV material tin (Sn) has been proven in our group to allow the formation of a direct bandgap material, prerequisite for any optoelectronic device. First characterizations proved optically-pumped lasing at cryogenic temperatures, as well as electrically-induced emission from light emitting diodes (LEDs), however, not suitable for real-world applications yet. Recently, we have been working on the introduction of heterostructures, which potentially allow more efficient light emission at elevated temperatures. Further information on the research field can be found under:

Project description:

  • Fabrication and characterization of photonic devices, such as light emitters (LEDs, lasers) and photodetectors for their integration into a simple optical link
  • Analysis of optical properties by a variety of spectroscopy techniques, for example photoluminescence, electroluminescence and absorption methods
  • Fabrication and investigation of nano-structured devices, previously manufactured in the cleanroom of the Helmholtz Nano Facility (HNF)
  • Interaction with other group members, working on epitaxy and electronic material characterization for continuous material improvement
  • Collaboration with international partner groups regarding electronic bandstructure calculations, device simulations and specific characterization techniques

Your Profile:

  • Academic degree (Master) in physics (or similar), ideally with a background in the field of semiconductor physics
  • Knowledge in optical spectroscopy techniques is beneficial
  • First experience in clean room processing is helpful
  • Very good skills in spoken and written English

Our Offer:

  • An interdisciplinary and international work environment at the well-recognized Peter-Grünberg-Institute 9 at the Forschungszentrum Jülich
  • An outstanding scientific infrastructure including several laboratories and a state-of-the-art clean room – ideal conditions for successfully completing a doctoral degree
  • Possibility to pursue the doctoral degree from the RWTH Aachen
  • Usually a contract for the duration of three years
  • A highly motivated group
  • Chance of participating in (international) conferences and project meetings
  • Continuous, professional support by your scientific supervisor
  • Further development of your personal strengths, e.g. via a comprehensive further training Programme
  • Usually a contract for the duration of 3 years
  • Pay in line with 65 % of pay group 13 of the Collective Agreement for the Public Service (TVöD-Bund)

Forschungszentrum Jülich would like to employ more staff in this area. We are therefore particularly interested in women`s applications. We also welcome applications from disabled persons.

We also welcome applications from disabled persons.

Additional Information

We look forward to receiving your application, preferably online via our online recruitment system on our career site, quoting the above-mentioned reference number.

Questions about the vacancy?
Contact us by mentioning the reference number 2019D-138:
Please note that for technical reasons we cannot accept applications via email.