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Solution for ReRAMs with Long-Term Stability

Jülich researchers develop design rules for reliable memristive random-access memory cells

Jülich, 19 October 2015 – They are many times faster than flash memories and require significantly less energy: ReRAM memories could revolutionize computer technology in the next few years. However, memristive memory cells are still too error-prone for many applications. A team of researchers from Jülich and Aachen have now discovered how storage cells that rapidly lose data can be distinguished microscopically from those with long-term stability. At the same time, they hit upon a solution for error-resistant storage cells: a storage layer for oxygen ions which can slow down and possibly even completely suppress the undesirable process. The results have been published in the journal Nature Communications.

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